By switching from sapphire to silicon wafers, the wafer size jumps from two or four inches to eight inches.
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At present these LEDs are made in machines similar to those used to make silicon chips, by depositing layers of gallium nitride on sapphire-based wafers.
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Gallium nitride, or GaN, converts electrical impulses to light and is grown on the surface of wafers made from sapphire or silicon carbide.
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