研究了注碳外延硅经氢气退火及电化学腐蚀处理后的荧光特性。
Photoluminescence properties of epitaxial silicon implanted carbon after annealed in hydrogen and anodization are measured.
采用该方案制作的氢气退火炉由气源部分、井式高温炉、炉罐、缓冷炉和急冷槽组成。
The furnace unit is consisted of a hydrogen supply source, a high temperature pit furnace, a furnace pot, a slow-cooling furnace, and a quench tank.
利用传热学原理估算了带钢连续退火生产中采用氢气和氢气加雾化水冷却介质的冷却速度。
The strip cooling rate with hydrogen and hydrogen plus water spray on continuous annealing line is estimated according to the heat transfer principle.
利用传热学原理估算了带钢连续退火生产中采用氢气和氢气加雾化水冷却介质的冷却速度。
The strip cooling rate with hydrogen and hydrogen plus water spray on continuous annealing line is estimated according to the heat transfer principle.
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