本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
采用热丝化学气相沉积法在覆盖c _(60)膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。
In this paper, the diamond films were grown on the C_ (60) -coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied.
用XL 30feg扫描电镜对热丝化学气相沉积(HFCVD)法合成的金刚石颗粒的初期生长过程进行了研究。
The initial growth process of diamond grain synthesized by HFCVD method was investigated by using XL30FEG SEM.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
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