特别论述硅器件玻璃钝化的原理和工艺流程。
Especially, the principles of glass passivation on silicon devices and processes are described.
微型单相1.5 A。玻璃钝化整流桥。最大的经常峰值反向电压600V。
Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 v.
玻璃钝化整流。经常性最大峰值反向电压200五，最大平均整流电流3.0A。
Glass passivated rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 a.
玻璃钝化整流。经常性最大峰值反向电压50V最大平均正向整流电流1.5A。
Glass passivated rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 1.5 a.
玻璃钝化结整流。最大重复峰值反向电压600V最大平均正向整流电流1.0A。
Glass passivated junction rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 1.0 a.
玻璃钝化超快速整流。经常性最大峰值反向电压200五，最大平均正向电流1.0A。
Glass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 a.
玻璃钝化整流。经常性最大峰值反向电压1000V最大平均正向整流电流3.0A。
Glass passivated rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 3.0 a.
单相玻璃钝化整流桥。最大重复峰值反向电压400V，最大平均整流电流1.0A。
Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 1.0 a.
单相玻璃钝化整流桥。经常性最大峰值反向电压400V，最大平均整流电流1.0A。
Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 1.0 a.
单相玻璃钝化整流桥。最大反向重复峰值电压600V最大平均正向整流电流1.0A。
Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 1.0 a.
单相玻璃钝化整流桥。经常性最大峰值反向电压50V最大平均正向整流电流2.0A。
Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 2.0 a.
单相玻璃钝化整流桥。经常性最大峰值反向电压600V最大平均正向整流电流1.0A。
Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 1.0 a.
与石英载体，梁式引线载体以及玻璃钝化载体相比，不论在性能上或者强度上都具有明显的优点。
The non-parasitic parameter carrier is superior to the quartz carrier and beam-lead carrier as well as glass passivation carrier in either performance or strength.
提出了台面造型的新方法，实现了在大台面、高电压、大电流晶闸管上采用玻璃钝化技术新的工艺途径。
A new method of mesa making model is proposed, and a new way of glass passivation technique is applied to high voltage and big current thyristor.
该传感器的DN 752和DN 752玻璃钝化联大有三位的LED显示屏，它们允许一个或者两个开关点或一个模拟输出，快速和简易的编程。
The sensors DN 752 GPP and DN 752 GA have a three-digit LED display and they allow a fast and easy programming for either two switchpoints or one analog output.
本发明涉及一种用于制造玻璃包覆电子元件的方法，其中尤其通过施用玻璃使所述元件钝化。
The invention relates to a method for the production of glass-coated electric components, wherein the components are, inter alia, passivated by the application of the glass.
本发明涉及一种用于制造玻璃包覆电子元件的方法，其中尤其通过施用玻璃使所述元件钝化。
The invention relates to a method for the production of glass-coated electric components, wherein the components are, inter alia, passivated by the application of the glass.
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