同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和NMOS管的周围增加了保护环。
At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
此外，本文在版图方面进行了研究，对匹配、串扰、噪声、寄生效应、闩锁效应和天线效应分别进行了论述，给出相应的解决办法。
Besides, layout is researched in-depth. Discussing the matching, crosstalk, noise, parasitic effects, the latch and antenna effect, I give appropriate solutions.
通过分析表明，只要让CMOS电路工作在安全区，闩锁效应是可以避免的，这可以通过版图设计规则和工艺技术，或者两者相结合的各种措施来实现。
It is also indicated, based on analysis, that the latch-up may be avoided if CMOS circuits work in safe section, and it can be realized by taking all kinds of measures, such as adjusting the layout...
通过分析表明，只要让CMOS电路工作在安全区，闩锁效应是可以避免的，这可以通过版图设计规则和工艺技术，或者两者相结合的各种措施来实现。
It is also indicated, based on analysis, that the latch-up may be avoided if CMOS circuits work in safe section, and it can be realized by taking all kinds of measures, such as adjusting the layout...
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