高介电常数薄膜广泛应用于动态随机存储器中。
High dielectric constant thin films have been used in high-density dynamic random access memories widely.
使用这种方法不需要专门的退火工艺，就可以制备晶体结构完整的高介电常数BST薄膜。
The results showed that high dielectric constant and low loss BST film can be fabricated using this method without special anneal process.
使用这种方法不需要专门的退火工艺，就可以制备晶体结构完整的高介电常数BST薄膜。
The results showed that high dielectric constant and low loss BST film can be fabricated using this method without special anneal process.
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