The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
特点是采用“反向击穿硅光电二极管”做靶面，并用快电子扫描。
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
特点是采用“反向击穿硅光电二极管”做靶面，并用快电子扫描。
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