The third bonding wire is electrically connected between the second chip and the loader.
第三焊线电性连接于第二芯片与承载器之间。
The RF characteristics of bonding wire interconnection in a simple package model were simulated.
针对一种用键合线连接的简单封装模型进行射频性能的模拟。
The second bonding wire is electrically connected between the relay circuit base board and the loader.
第二焊线电性连接于中继线路基板与承载器之间。
The first bonding wire is electrically connected between the first chip and the relay circuit base board.
第一焊线电性连接第一芯片与中继线路基板之间。
Should first bonding wire brush to remove sediment from the bottom surface, and then immediately sprayed coating job.
应先用钢丝刷刷去除粘结底层表面的沉积物，然后立即喷涂工作涂层。
The content and focus of the project is based on the research and analysis of the present condition of internal and external golden bonding wire production.
我们在对国内外的键合金丝生产及研究现状进行详细分析与研究之后，确立了项目的研究内容并提出了项目的预期目标。
Wire bonding is a critical technique for realizing microwave hybrid circuit.
引线键合是实现微波混合电路的关键技术。
Gas plasma technology can be used to clean pads prior to wire bonding to improve bond strengths and yields.
气体等离子技术能够用于在引线键合前清洗焊盘以改进键合强度和成品率。
Its comprehensive coverage focuses on printed circuits, integrated circuits, contact materials, semiconductors, wire, bonding, brazing, soldering, and welding.
它的广泛报导集中在印刷电路、集成电路、连接材料、半导体、导线、粘结、钎焊、焊锡和焊接。
From the view of wire bonding, the whole procedure consists of two states: the free motion and the constrained motion.
从引线键合运动的角度来说，完整过程包括两种不同的运动状态：自由运动和约束运动。
That BP network used for predicting quality of wire bonding is feasible and valid.
BP网络用于金丝键合质量的预报具有可行性和有效性。
This paper simply described the process inspection of automation Al wire ultrasonic wedge bonding in ceramic packaging IC.
本文简要描述了陶瓷外壳封装集成电路自动铝丝楔焊键合的工序检查。
According to the circuit of ultrasonic wire bonding experiment platform, a piezoelectric transducer (PZT) driver signal acquisition circuit was designed.
根据超声引线键合实验平台电路结构，设计了PZT(压电陶瓷)驱动信号采集电路。
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。
Aluminum wire ultrasonic bonding; transducer drive current; signal time-frequency analysis; feature selecting; quality online monitoring.
粗铝丝超声引线键合；换能器驱动电流；信号时频分析；特征提取；质量在线监测。
In ultrasonic wire bonding process, the bonding pressure is one of the most important factors to the bonding strength.
在超声引线键合过程中，键合力是影响键合强度的重要因素之一。
As the demand increasing steadily for small volume, high density and high heat-dissipation rate IC, the key parameter of wire bonding — pad pitch has to shrink in accordance.
由于市场对小体积、高集成度和高散热率芯片的需求量与日俱增，引线键合工艺的关键参数——焊盘间距也不断缩小以满足市场要求。
A correlative performance experimental of wire bonding positioning table is tested.
对引线键合定位平台进行了相关实验，对平台进行了性能测试。
The effect of bonding time on the bonding strength of thick aluminum wire wedge bonding was studied under different ultrasonic power conditions.
试验研究了不同超声功率条件下，键合时间对粗铝丝引线键合强度的影响规律。
In this paper, the forming process of copper wire ball in copper ball bonding has been studied by numerical simulation.
本文采用数值模拟的方法研究了铜丝球键合技术中的形球过程。
The result shows that the plastic strain at the heel region induced by wire bonding process, molding process and the thermal stress and strain in solder reflow are the main causes of heel crack.
结果显示由于引线键合工艺、注塑工艺以及回流焊中封装体各部分不同的热膨胀系数引起的热应力和塑性变形是产生引脚跟断裂的主要因素。
Several silk materials including gold silk, copper silk and aluminum silk used as conductor in wire bonding technology in electronics packaging materials were introduced.
介绍了电子封装材料中用于引线键合工艺的几种主要导电丝材料，包括金丝、铜丝和铝丝。
The first step is to model the close loop control system of wire bonding force.
两步走的策略被采用：第一步，建立键合力控制系统的闭环模型；
Thermal-structural analysis was performed for ultrasonic wire bonding(UWB) by three dimensional finite element method(FEM).
用三维有限元方法对超声波线焊进行了瞬态的热-结构分析。
The influences of ultrasonic power on heavy aluminum wire wedge bonding strength were investigated.
超声功率是影响粗铝丝引线键合强度的最主要因素之一。
If the Al film on the bond pad is pierced through by the probe in wafer probing, the wire bonding strength and device reliability would be affected.
在芯片测试中，若引线焊盘上的铝层被探针扎穿，就会影响引线键合的牢固性和器件的可靠性。
Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method.
丝焊方法，半导体器件，丝焊的毛细管及球块形成方法。
The results show that there is not any evidence of silver migration within LTCC construction, and conductor adhesive force, wire-bonding strength and insulation resistance are high.
结果表明：基板内部的银导体不存在迁移现象，导体的附着力、键合强度以及基板的绝缘电阻等性能均比较理想。
The results show that there is not any evidence of silver migration within LTCC construction, and conductor adhesive force, wire-bonding strength and insulation resistance are high.
结果表明：基板内部的银导体不存在迁移现象，导体的附着力、键合强度以及基板的绝缘电阻等性能均比较理想。
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