Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Discotic liquid crystals possess high charge carrier mobility and show huge potential application as organic electronic materials.
盘状液晶有较高的载流子迁移速率，作为有机半导体材料有广泛的应用前景。
We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。
Abstract: the influence of the carrier mobility on the performances of organic solar cells was studied using the simulation method.
摘要：通过器件模拟的方法研究了载流子迁移率对有机太阳能电池性能的影响。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
Although providing a continual performance improvement of integrated circuits, geometric scaling of si devices can not enhance carrier mobility physically.
按比例缩小使集成电路的性能得以不断提高，但这并不能够从物理本质上增强载流子的迁移率。
Substrate induced stress, process induced stress and use of different substrate orientations are major techniques that can significantly enhance carrier mobility.
衬底诱生应力、工艺诱生应力和采用不同的衬底晶向等三类方法都可以显著提高载流子的迁移率。
Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The mobility value used is that of the minority carrier.
所采用的迁移率值都是少子迁移率。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
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