This paper presented putting use of the wasted mud residue of plating Zn-Ni alloy to reclaiming bath by chemical deposition method.
本文叙述了化学沉淀法处理电镀锌镍合金废水所得到的污泥回槽利用问题。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method.
本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。
Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.
为快速沉积高品质金刚石膜，建立了热阴极等离子体化学气相沉积方法。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Since carbon nanotubes (CNTs) have been discovered in 1991, they are mainly produced by arc-discharge evaporation and Chemical vapor Deposition (CVD) method.
纳米碳管自1991年被发现以来，目前主要的制备方法有电弧法和化学气相沉积(cvd)法。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
The conventional preparing method -chemical vapor deposition (CVD) need a long period and expensive cost.
传统化学气相沉积(CVD)工艺制备周期长，而且成本高。
Helical carbon nanotubes were synthesized by a chemical vapour deposition method from both silica aerogels and silica xerogels containing catalysts.
采用气凝胶与干凝胶两种催化剂载体通过化学气相淀积方法制备出螺旋状的碳纳米管。
A novel method to fabricate magnetic nickel nanostructures onto the interface of gold electrode pairs is presented by magnetic field-assisted selective chemical deposition of nickel.
结合磁场诱导与选择性化学沉积，在微米级间隙金电极界面上原位生长镍纳米线。
Finally, annealing process is carried out in the electroplated metal layer formed by the electroplating process through chemical vapor deposition method under promotion of ammonia plasma.
之后，利用氨气等离子体促进化学气相沉积法对上述经电镀制程而形成的电镀金属层进行退火处理。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
Trouble caused by pitch deposition in newsprint production of Guangzhou Paper Mill is described. Chemical control method and process control method for controlling pitch deposition are discussed.
主要介绍了新闻纸生产中树脂的沉积及其造成的障碍，重点阐述了目前广州造纸有限公司新闻纸生产中控制树脂沉积的方法。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Carbon nanotubes filled with metal were synthesized through chemical vapor deposition method, and the structure were studied by electron microscopy.
本文系统介绍了金属填充碳纳米管的化学气相沉积制备与电子显微学研究。
Chemical vapour deposition is a preferable method.
化学气相沉积法是最可行的方法。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
The globe-like diamond microcrystalline aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.
探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。
Cracked tungsten tubes prepared by chemical vapor deposition were investigated by ring machine cutting method and X? Ray stress analysis system.
采用切环测量法及X射线应力分析方法对化学气相沉积制备的开裂钨管进行测量与分析。
Laser induced chemical vapor deposition is the main method among the methods of fabricating nano Si3N4.
激光诱导气相沉积法是制备纳米氮化硅粉末的主要方法之一。
Laser induced chemical vapor deposition is the main method among the methods of fabricating nano Si3N4.
激光诱导气相沉积法是制备纳米氮化硅粉末的主要方法之一。
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