The methods of preparing diamond films by chemical vapor deposition were reviewed.
评述了金刚石薄膜的化学气相沉积方法。
The carbon nanotubes were synthesized by the heat filament chemical vapor deposition.
研究所用的碳纳米管是用热灯丝化学气相沉积法合成的。
High quality diamond thin films were grown by hot-filament chemical vapor deposition.
采用热丝化学气相沉积生长出优异的金刚石薄膜。
The carbon nanotubes were synthesized by the heat filament chemical vapor deposition (CVD).
实验中所用碳纳米管由化学气相沉积法(CVD)合成。
Carbon nanotubes in experiments were synthesized by hot filament chemical vapor deposition.
所用的碳纳米管是用热灯丝化学气相沉积法合成的。
In this paper, substrate materials of diamond films by chemical vapor deposition are discussed.
讨论了化学气相沉积金刚石薄膜的各种衬底材料。
This paper gives an overview of plasma enhanced chemical vapor deposition used in the solar industry.
本文针对电浆辅助化学气相沉积在太阳能产业上的应用作一概略性的介绍。
Experimental results on amorphous silicon growth by CO2 laser chemical vapor deposition are reported.
本文报道了CO_2激光化学气相沉积非晶硅的实验研究。
The conventional preparing method -chemical vapor deposition (CVD) need a long period and expensive cost.
传统化学气相沉积(CVD)工艺制备周期长，而且成本高。
The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition (HWP-CVD).
利用螺旋波等离子体化学气相沉积(HWP - CVD)技术，以氢气为反应气体产生等离子体。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
以镍片为基板材料，利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
To produce flexible transistor arrays powerful enough to drive a display, engineers employ a process called chemical vapor deposition.
为了生产强大到可以驱动显示的可弯曲晶体管序列，工程师们使用了一种称为“化学气相沉积”(chemical vapor deposition)的流程。
Recently, chemical vapor deposition (CVD) is gradually used in order to enhance the wear resistance and cutting efficiency of bures.
近年来，化学气相沉积(CVD)法逐渐应用于车针后续处理过程之中，增强了车针的耐磨性和切削效率。
MOCVD stands for Metalorganic Chemical Vapor Deposition, is one technology used to grow wafers from underlay with the MOCVD equipment.
MOCVD是金属有机化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.
为快速沉积高品质金刚石膜，建立了热阴极等离子体化学气相沉积方法。
The article has introduced the application and development tendency of techniques of film making with chemical vapor deposition in all fields.
本文介绍了化学气相沉积制膜技术在国民经济各个领域中的应用及其发展趋势。
Under the catalytic effect of nickel particles, spring-like carbon filaments were synthesized through microwave plasma chemical vapor deposition.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
Since no company has perfected the chemical vapor deposition process, Applied materials is testing out their process using a variety of methods and materials.
因为没有一个公司能使化学气相沉积过程完美应用，AMAT在尝试他们自己的流程，使用各种方法和材料。
Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more.
课堂讲授和实验课重点介绍了基本制程技术，如扩散、氧化、光刻、化学气相沉积等。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.
探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。
Since carbon nanotubes (CNTs) have been discovered in 1991, they are mainly produced by arc-discharge evaporation and Chemical vapor Deposition (CVD) method.
纳米碳管自1991年被发现以来，目前主要的制备方法有电弧法和化学气相沉积(cvd)法。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
The technical advantages of vacuum plasma spray over conventional chemical vapor deposition(CVD) and air plasma spray in tungsten coating were also discussed.
和CVD方法以及常压等离子体喷涂方法制备的钨涂层相比，低压等离子体喷涂具有明显的优势。
Diamond coatings were deposited on cemented carbide substrates with H2, CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique.
利用微波等离子体化学气相沉积方法，以H 2、CH4和八甲基环四硅氧烷(D4)为原料，在硬质合金基体上沉积了金刚石涂层。
Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition (MOCVD) with carbon nanotubes as templates in this paper.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition (MOCVD) with carbon nanotubes as templates in this paper.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
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