The carbon nanotubes were synthesized by the heat filament chemical vapor deposition (CVD).
实验中所用碳纳米管由化学气相沉积法(CVD)合成。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
In order to modify the surface properties of the particles, composite particles are prepared by the process of Chemical Vapor Deposition (CVD) in a fluidized bed reactor.
为了对颗粒表面进行改性，在自行设计组装的流化床反应器中，利用化学气相沉积法(CVD)制备了不同的复合颗粒。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
Since carbon nanotubes (CNTs) have been discovered in 1991, they are mainly produced by arc-discharge evaporation and Chemical vapor Deposition (CVD) method.
纳米碳管自1991年被发现以来，目前主要的制备方法有电弧法和化学气相沉积(cvd)法。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
Recently, chemical vapor deposition (CVD) is gradually used in order to enhance the wear resistance and cutting efficiency of bures.
近年来，化学气相沉积(CVD)法逐渐应用于车针后续处理过程之中，增强了车针的耐磨性和切削效率。
The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition (HWP-CVD).
利用螺旋波等离子体化学气相沉积(HWP - CVD)技术，以氢气为反应气体产生等离子体。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
The technical advantages of vacuum plasma spray over conventional chemical vapor deposition(CVD) and air plasma spray in tungsten coating were also discussed.
和CVD方法以及常压等离子体喷涂方法制备的钨涂层相比，低压等离子体喷涂具有明显的优势。
The conventional preparing method -chemical vapor deposition (CVD) need a long period and expensive cost.
传统化学气相沉积(CVD)工艺制备周期长，而且成本高。
To study the reaction mechanism of CVD (chemical vapor deposition) reaction system, quantum chemistry methods are proved highly potential.
量子化学方法在研究化学气相沉积反应体系的反应机理、动力学计算方面有很大的潜力。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
A semiconductor company based in Beijing is in need of a Chemical Vapor Deposition (CVD) equipment Engineer with very competitive salary and other benefits.
北京一半导体公司急聘一名化学气相沉积(CVD)设备工程师，待遇从优。
This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto.
将该结构体是在金属催化剂的存在下，在反应气氛中添加氧化剂、优选水，使碳纳米管进行化学气相成长(CVD)进行制造的。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
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