Since carbon nanotubes (CNTs) have been discovered in 1991, they are mainly produced by arc-discharge evaporation and Chemical vapor Deposition (CVD) method.
纳米碳管自1991年被发现以来，目前主要的制备方法有电弧法和化学气相沉积(cvd)法。
The conventional preparing method -chemical vapor deposition (CVD) need a long period and expensive cost.
传统化学气相沉积(CVD)工艺制备周期长，而且成本高。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
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