Mathematical models were developed to simulate particle reduction in CMP slurry distribution systems.
为模拟CMP磨料分配系统的粒子减少开发了数字模型。
The selectivity, the chemical and mechanical function's matching, the storage of the slurry and post CMP cleaning ULSI inlaid tungsten CMP have been studied in this article.
研究的是ULSI镶嵌钨CMP的选择性，化学与机械作用匹配，浆料的悬浮及存放和后清洗等问题。
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.
单步循环过滤，用来去除胶体硅基化学机械抛光(CMP)磨料中尺寸过大的微粒。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W -CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Slurry performance for CMP can be determined by several output parameters including removal rate, global planarity and surface defect.
抛光液的优劣主要有抛光率，平坦性以及缺陷的数量等几个参数反应。
Slurry performance for CMP can be determined by several output parameters including removal rate, global planarity and surface defect.
抛光液的优劣主要有抛光率，平坦性以及缺陷的数量等几个参数反应。
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