At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
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