In this paper, asymmetrical coplanar lines in free space are analyzed using two conformal mapping models, and the exact solutions for the basic parameters of the lines are obtained.
分析了两种不同模型的自由空间中非对称面西线，其共形变换技术得到了线电容的严格解；
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
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