• Device Processing: Etching. Surface passivation; dielectric films.

    元件制程:蚀刻表面钝化介电材料薄膜

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  • Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.

    同时芯片表面钝化缺陷数目温度作用下增加,引起芯片表面复合速度增加

    youdao

  • Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.

    同时芯片表面钝化缺陷数目温度作用下增加,引起芯片表面复合速度增加

    youdao

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