Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed.
对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed.
对ESD应力下扩散电阻的四个区域：线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
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