The implanted dopant has a first dopant profile in the silicon layer.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
The results indicate that a hybrid profile of RI and dopant is the best choice for LMA fiber with coiling.
研究结果表明：具有复合形状的折射率和掺杂离子分布可以有效提高弯曲条件下大模面积增益介质光纤的性能。
The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant.
交替掺杂形态区域包含高低掺杂浓度的交替区域。
The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant.
交替掺杂形态区域包含高低掺杂浓度的交替区域。
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