Calculations were made of the doped concentration "C0", of the thickness of Cu-film about Cu-treatment and of the junction areas increased by pre-etching.
根据所提出的模型及假设，计算了铜—硫化学比的失配量与掺杂浓度的关系和铜处理工艺中蒸铜层的厚度，采用误差补函数扩散模型计算了结深的增长速率。
Calculations were made of the doped concentration "C0", of the thickness of Cu-film about Cu-treatment and of the junction areas increased by pre-etching.
根据所提出的模型及假设，计算了铜—硫化学比的失配量与掺杂浓度的关系和铜处理工艺中蒸铜层的厚度，采用误差补函数扩散模型计算了结深的增长速率。
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