The doped semiconductor line is coupled to a row of memory cells.
掺杂半导体线连接至一行存储单元。
Finally, the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.
本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性。
Appropriately doped, it is an excellent semiconductor and its raw material, sand, is hardly in short supply.
经过适当的渗透处理后，它是一种性能优越的半导体，而且它的原料——沙子——几乎不存在供应短缺的状况。
The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.
结果表明：随着触媒中碳化硼添加量的增加，含硼金刚石单晶的电阻率降低，可呈现半导体电阻特性。
Glass doped with nano_scale semiconductor particles has obvious nonlinear optical properties and the quantum_size effect is large.
纳米级半导体微晶掺入玻璃可产生非线性光学性质，其量子尺寸效应非常明显。
The magnetic atoms doped are called magnetic impurities and the nonmagnetic semiconductor is called the based material.
其中被掺入的磁性原子称作磁性杂质，非磁半导体称作基质。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The existence mode of the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material is the nano powder and the nano film.
该镍离子掺杂的氧化镉基稀磁半导体纳米材料存在形态为纳米粉末和纳米薄膜。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
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