For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
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