The electron beam lithography and its improvement are introduced also.
同时还介绍了电子束光刻技术及其改进。
DY2001A Electron Beam Lithography System (EBLS) is developed as a practical miniature EBLS.
DY 2001a型电子束曝光机是作为实用化的小型曝光系统而研制的。
Electron beam lithography machine is the key instrument for mask making and research of nanometer device.
电子束曝光技术是掩模版制作和纳米器件研究的主要手段。
They begin with a small sheet of graphene and carve channels into the material using electron beam lithography.
从一小片石墨烯开始，采用电子束曝光在材料上刻出通道。
The deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.
电子束曝光机的偏转系统控制电子束偏转扫描。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The composition, principle and working procedure of the application software of EBES-40A electron beam Lithography system are introduced.
本文简要地介绍了一种圆形电子束曝光机应用软件的结构、工作原理及工作过程；
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
The manufacture of high-line-density X-ray transmission gratings for X-ray spectroscopy by using electron beam lithography and X-ray lithography was reported.
针对X射线透射光栅摄谱仪中的高线密度光栅，研究了采用电子束曝光和X射线曝光技术结合制作高线密度X射线透射光栅的工艺技术。
The projection electron beam lithography with angular limitation(PEBL)is potentially one of the most attractive techniques for nano lithography in the21st Century.
具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。
A novel process combining the self-assembly technique with electron beam lithography and selective chemical deposition was proposed for patterned film preparation.
本文提出了一种新颖的结合自组装技术和电子束直写曝光以及选择性化学沉积制备图案化薄膜方法。
The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.
制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
Furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.
此外，用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正。
The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.
本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
Inductors were defined by electron-beam lithography and formed by depositing micron-thick aluminium metal onto the wafers.
用电子束刻蚀法在晶片上镀上纳米级铝层形成了电感器。
Electron - beam lithography with a novel multilevel resist structure defines the pattern.
采用新型的多层抗蚀剂结构的电子束光刻来形成图形。
In this paper, a unique hoisting structure of laser positioning stage system for electron-beam lithography machine is described.
本文介绍了电子束曝光机激光定位工作台的一种新型吊装结构。
Mask fabrication is a key technique of scattering with angular limitation projection electron-beam lithography (SCALPEL).
掩模制作是电子束散射角限制投影光刻(SCALPEL)的关键技术。
The laser Positioning stage system with hoisting structure which is being developed is the main part of the Electron - beam Lithography Machine.
正在研制的激光定位吊装结构工作台系统是电子束曝光机的主要组成部分。
We study the factors which affect electron-beam micro lithography, combining with our practical work.
结合实际工作，分析、探讨了影响电子束曝光机加工微细化的因素。
The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。
The mold manufacturing is the key part in imprint lithography process, which includes electron beam direct writing, stepping molding, and the conversion from small mold to big mold.
采用电子束直写、步进制模、压印翻制的压印模具生产工艺，其模具的制造是目前面临的难点。
By analyzing the spread function and development contrast curve, we hypothesized that the resolution limit of electron-beam lithography is primarily limited by developer-diffusion.
通过对电子束扩散函数与显影对比度的分析，本文认为电子束曝光的分辨极限与显影液在纳米尺度下的扩散限制有关。
We proposed to fabricate functional nanostructures directly by electron-beam lithography and irradiation.
本文为此提出了利用电子束曝光和辐照直接制作功能纳米结构。
We proposed to fabricate functional nanostructures directly by electron-beam lithography and irradiation.
本文为此提出了利用电子束曝光和辐照直接制作功能纳米结构。
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