Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
A tunable GaAlAs diode laser is used as a chirp signal source, the distance is detected by calculating the beat frequency.
由可调谐半导体激光器产生一个啁啾信号，通过测量拍信号频率计算距离。
A tunable GaAlAs diode laser is used as a chirp signal source, the distance is detected by calculating the beat frequency.
由可调谐半导体激光器产生一个啁啾信号，通过测量拍信号频率计算距离。
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