Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
应用推荐