In this paper a laser way for obtaining "whisker" of semiconductor GaAs is presented and the prospect of using new material is simply described.
本文报道了获取半导体砷化镓“晶须”的激光方法，并简述了新材料的应用前景。
The experiment indicate that the deep energy trap is benefit to increase the ability of GaAs photoconductive switches absorbing long wavelength limit laser pulse obviously.
实验表明深能级的引入有利于开关对长波限激光脉冲的吸收。
Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.
输出耦合镜作为激光光路系统的核心部件，通常由硒化锌、锗、砷化镓等基材制成。
Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.
输出耦合镜作为激光光路系统的核心部件，通常由硒化锌、锗、砷化镓等基材制成。
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