The design technology and developed results for C band GaAs MMIC 6 bit digital phase shifter are described.
叙述了一种采用单片集成方式实现的C波段6位数字移相器的设计技术和研制结果。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.
提出了一种MESFET开关的模型——附加栅控开关模型，适用于MMIC电路的设计，具有很好的宽带微波特性。
This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.
提出了一种MESFET开关的模型——附加栅控开关模型，适用于MMIC电路的设计，具有很好的宽带微波特性。
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