An interface layer is formed on the gate dielectric layer.
在栅极电介质层上形成界面层。
In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
实施例中，本方法包括在半导体衬底上形成栅极电介质层。
The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
门电介质沉积层使用气体包括一个芯片和含氯化合物的混合物等离子增强沉积。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
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