A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.

栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。

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A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.

栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。

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