• And how is it known that Mars had hafnium-187?

    那么如何知道火星- 187的呢?

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  • Chemical form of hafnium is perchlorate or nitrate.

    化学形态为过氯酸盐硝酸盐。

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  • Mainly because the quantity of hafnium, utilized in one chip, is negligibly small.

    主要是因为数量利用一个芯片微乎其微

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  • Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric;

    具体地,本发明提供金属叠层包括:介质

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  • The extraction separation process for zirconium and hafnium with MIBK was briefly reviewed in this paper.

    简要评述甲基异丁基酮( MIBK)萃取分离方法的基本原理、分离工艺条件、萃取设备。

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  • The hafnium crystal bar was produced by the iodide decomposition method from wast material of processing.

    碘化物热分解加工生产

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  • The post-irradiation effects of 30% TBP-Kerosene-HNO3 systems have been investigated by means of the hafnium number test.

    本文借助指数实验研究了30%TBP-煤油-硝酸体系辐照后效应。

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  • The technology for separation of zirconium and hafnium is the key to prepare reactor-grade productions of zirconium and hafnium.

    分离技术生产核级锆核级铪核心技术。

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  • So the research of preparation of ceramic scintillators containing hafnium compounds or hafnium has been becoming more and more popular.

    因此制备化合物铪化合物闪烁陶瓷,是近年新材料研究热点之一。

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  • Perhaps the most important use of sodium metal is as a reducing agent in producing high melting point metals, such as titanium and hafnium.

    也许金属重要用途作为还原剂生产熔点金属比如

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  • The first they dealt with by coating the top of the device with oxides of hafnium, molybdenum and titanium, in layers about 100 nanometres thick.

    第一他们装置处理氧化物,这层物质仅有100纳米

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  • A new process of metallurgy of rare metals zirconium and hafnium with caustic soda instead of sodium carbonate to rub up zircon is examined.

    研究氢氧化钠代替碳酸钠拌和英砂冶炼稀有金属工艺

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  • Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.

    化镓增长等离子体辅助(111)分子束外延(001)衬底上氮化缓冲使用

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  • A method for determination of hafnium in zirconium under Ar-O_2 controlled atmosphere was developed and the conditions of ratio of Ar-O_2, excited current and exposed time were optimized.

    研究了在氩氧控制气氛条件分析条件,对氩氧激发电流曝光时间等实验参数进行了选择。

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  • A method for determination of hafnium in zirconium under Ar-O_2 controlled atmosphere was developed and the conditions of ratio of Ar-O_2, excited current and exposed time were optimized.

    研究了在氩氧控制气氛条件分析条件,对氩氧激发电流曝光时间等实验参数进行了选择。

    youdao

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