• The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.

    介绍高速规模集成数字频率合成器、晶体管高频大功率放大器设计

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  • Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.

    介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)方法

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  • The high-power transistor of exciter will be damaged after the 3-phase circuits' sudden short, which results in starving for the analysis and study of the phenomenon.

    发电机突然三相短路导致励磁系统大功率晶体管损坏,必须现象进行分析研究

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  • In this paper, the failure analysis of a type of high frequency power transistor is introduced.

    介绍了对某型号高频大功率晶体管进行失效分析

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  • The traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.

    由于存在温度电流问题,传统的测试与老化筛选功率方法不能完全适用于功率芯片

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  • A high quality audio power amplifier is disclosed, whose quality features the dynamic nature of transistor and the sounds quality of electronic tube. Its key technique is use of c.

    本发明提供了一种品质音频功率放大电路,品质具有晶体管动态电子管音色关键技术所在采用C。

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  • In particular, as a high-power EMP is suddenly injected into a transistor, electrical or thermal breakdown can be definitely caused.

    特别地,一个高功率电磁脉冲突然加载晶体管上时,会导致晶体管的击穿击穿。

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  • Darlington transistor is more convenience in power amplification areas because of its high power gain and high reliability.

    达林顿晶体管增益大可靠性,尤其大功率应用中更加简便

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  • A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.

    介绍一种大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d驱动模块EXB840设计直流升压斩波器。

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  • High-power transistor drive is not affected by high frequencies.

    大功率晶体管驱动高频影响。

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  • In this switching power supply, the novel mode of serial two-transistor is adopted to solve the difficulty of choosing switch transistor under the condition of high-voltage input.

    开关电源采用新颖串联模式解决高电压输入条件开关管的选用难题

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  • Main electrical components are all made up of transistor manifold from well-known manufacturers and German original high-power high-speed switching tube IGBT.

    主要电气部件采用知名厂家晶体管集成块德国原装大功率高速开关igbt组成

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  • This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high

    模型可供优化设计极型高频、高压、低饱和压降功率器件参考。

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  • This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high

    模型可供优化设计极型高频、高压、低饱和压降功率器件参考。

    youdao

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