The theory of ion etching and the parameter of ion source designing are discussed in detail.
并且详细论述离子刻蚀的原理以及离子源的参数设计。
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
A patterned DLC thin film cathode was fabricated by reactive -ion etching method and mic ro -fabrication technology.
通过离子束技术和微细加工技术可以实现DLC薄膜的图形化并能大大提高薄膜的场发射性能。
The thickness of absorbed films was measured for three CWM dispersants by X-rayphotoelectric spectrometer and argon-ion etching in this report.
本文采用X光电子能谱加氩离子刻蚀法，测出三种分散剂在煤表面吸附膜的近似厚度。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
High energy heavy ions generate potential tracks on the face of insulated material, and a porous surface with gradient refractive index can be formed by etching the ion tracks.
高能重离子在绝缘材料表面产生的潜径迹经过蚀刻后形成一定形貌的核径迹孔，而密集的径迹孔表面相当于渐变折射率层。
This result is just opposite from the ion implantation enhanced etching which was reported by many authors under wet etching.
这一结果与所报道的离子注入增强腐蚀的结果正好相反。
The 16-step Fresnel lens had been fabricated by thin film deposition and ion beam etching and it has been used in refractive-diffractive CCD camera.
使用薄膜沉积法和离子束刻蚀法制作16阶菲涅耳透镜，应用于折衍混合CCD相机。
Abstract : Ion beam etching technologies for developing large aperture Diffractive Optical Elements (DOEs) were reviewed.
摘要 ：总结了大尺寸衍射光学元件离子束刻蚀技术的研究进展。
We derived formulas of thickness of absorbed layer and etching rate of an ion beam from the formula of intensity peaks.
由谱峰强度公式导出了吸附层的厚度和离子束对其剥离速率的表达式。
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
This result is opposite to the ion im-plantation enhanced etching by wet method reported by other authors.
此结果与文献所报道的离子注入增强腐蚀正好相反。
The authors think that the high temperature on polymer local surface produced by ion bombardment is the main cause of artifacts on sample surface treated by ion-etching.
本文作者认为等离子体轰击高聚物表面引起的局部高温是离子刻蚀后试样表面出现伪迹的重要原因。
Ion beam etching (IBE) was applied to treat the as-polished surfaces of a CLBO crystal with varying in rotation speed of clamp, etching times and incidence angles.
本文研究了在不同作用时间、不同工件转速、不同入射角度等条件下离子束对CLBO晶体抛光表面的处理效果。
The surface etching and pretreatment of the current of positive and negative electrodes of polymer Li-ion batteries was introduced.
介绍了聚合物锂离子电池正、负极集流体表面的蚀刻与预处理及热压与直接涂布两种电极制备工艺。
The surface etching and pretreatment of the current of positive and negative electrodes of polymer Li-ion batteries was introduced.
介绍了聚合物锂离子电池正、负极集流体表面的蚀刻与预处理及热压与直接涂布两种电极制备工艺。
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