A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
The principle and method of calibrating and aligning the laser light scattering system were presented combined with the author's experience.
结合实践介绍了标定与调试激光光散射系统的原理和方法。
The particle diameter and its polydispersity were determined with laser dynamic light-scattering method.
采用激光动态光散射法检测粒度与粒度分布。
The particle diameter and its polydispersity were determined with laser dynamic light-scattering method.
采用激光动态光散射法检测粒度与粒度分布。
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