Monte Carlo method and the eigen-driven analysis method are combined to simulate the effects of errors on side-lobe level distribution of the Ultra-low side-lobe arrays.
采用本征激励法，在考虑互耦影响下，数值模拟了幅度误差、相位误差、位置误差和不平行度偏差等对超低副瓣阵列天线方向图性能的影响。
Monte Carlo method and the eigen-driven analysis method are combined to simulate the effects of errors on side-lobe level distribution of the Ultra-low side-lobe arrays.
采用本征激励法，在考虑互耦影响下，数值模拟了幅度误差、相位误差、位置误差和不平行度偏差等对超低副瓣阵列天线方向图性能的影响。
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