It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of "electron temperature".
在LPCVD理论模型基础上，通过引进“电子温度”，对PECVD多晶硅膜进行了计算机模拟分析。
Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of "electron temperature".
在LPCVD理论模型基础上，通过引进“电子温度”，对PECVD多晶硅膜进行了计算机模拟分析。
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