It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
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