Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces.
一种用于半导体发光器件的安装基板包括具有第一和第二相对金属表面的固体金属块。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
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