Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。
In this paper showed a measurement method of minority carrier lifetime.
本文提出了一种测量少数载流子寿命的方法。
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented.
本文建议子一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
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