For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.
为了研究MOS结构的电子辐照效应，采取了能量为0。
The investigated results are very important for the research and fabrication of the MOS structure gas sensors.
研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
The stability and composition of oxidic film and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper.
对氧化膜的组分和稳定性，以及MOS结构的C—V特性进行了实际测量和理论分析。
Besides, in order to minimize the area of output driving MOSFET, high W/L density structure is adopted with effective W/L density being doubled compared with normal MOS structure.
此外还研究了高宽长比功率驱动MOS晶体管的版图优化设计，通过采用高密度的版图结构使有效宽长比密度提高了一倍，从而使其占用的版图面积为缩小为原来的一半。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
采用LDD结构：3。在允许的范围内，适当增加器件的沟道长度。
A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.
报道了一种新结构的功率栅控晶闸管，称其为槽栅MOS控制的晶闸管(TMCT)。
Full-differential structure and bottom plane sampling technique and optimization of switch capacitor and MOS switch were used in this circuit.
设计中采用全差分结构和底极板采样技术，优化了开关电容和MOS开关。
An. integrated MOS ring oscillator pressure sensor with silicon box structure, having frequency as output is reported.
本文报道了一种硅盒结构的、具有频率输出的集成MOS环振式压力传感器。
The physics, structure and technology of the deep submicron MOS devices were given.
本文从器件物理、器件结构和工艺等三个方面介绍了深亚微米器件。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
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