The invention relates to a phase change memory.
本发明有关于一种相变化存储器。
Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
还公 开了相关的一次可编程器件、相变存储器件和电子系统。
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26).
一种由多个具有在自身的加热体(26)上方延伸的硫属化物存储区(28)的相变存储器件形成的相变存储器。
Disclosed herein are a method of forming a stable phase change layer without generating seams, and a method of manufacturing phase change memory device using the same.
本文公开了一种形成不产生接缝的稳定的相转变层的方法以及制造使用所述相转变层的相转变存储器件的方法。
The new material offers an approach that is radically different from a promising type of storage called "phase-change memory" being pursued by I.B.M., Intel and other companies.
这种新材料提供的方法完全不同于i.b.m .英特尔和其他公司在设计的被称为“相变存储器”的新型存储。
The test phase use the restoring tests of graphics, then analysis results points of the restoring tests to study the occurrence and change mechanism of implicit memory and explicit memory.
测验阶段使用图形补笔测验，分析各项计分成绩，考察内隐记忆和外显记忆的发生及其性别差异。
Diode is considered to be the best driver of high-density phase change Random Access Memory (PCRAM) for its advantage of the cell area.
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
Diode is considered to be the best driver of high-density phase change Random Access Memory (PCRAM) for its advantage of the cell area.
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
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