The structure of the laser crystallized poly-Si thin film is analyzed by using spectroscopic ellipsometry.
采用椭偏光谱法分析了薄膜的结构，并提出多层膜模型模拟薄膜结构。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
Poly-Si can be produced by laser crystallization of a-Si, metal-induced crystallization of a-Si, and many other methods.
多晶硅薄膜的制备方法很多，主要有化学气相沉积法、激光结晶法、金属诱导晶化法等。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
In addition, with the increasing distance between the filament and the substrate, the crystalline volume fraction and the grain size of poly-Si films notablely decrease.
另外，随着热丝与衬底间距的增大，沉积出的多晶硅薄膜样品的晶化率明显减小，薄膜的晶粒尺寸也相应减小。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
Poly-silicon thin film solar cells with high efficiency, stability and low-cost would replace the a-Si thin film solar cells as a new generation of non-pollution civil solar cells.
高效、稳定、廉价的多晶硅薄膜太阳电池有可能替代非晶硅薄膜太阳电池成为新一代无污染民用太阳能电池。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
The surface profiles, micro-morphologies and crystal quality of SSP ribbon and Poly-Si film were then investigated by the step profiler, XRD (X-ray Diffraction) and SEM (Scanning Electron Microscopy).
借助台阶仪、X射线衍射(XRD)、扫描电镜(sem)等手段对颗粒硅带及多晶硅薄膜进行了表面轮廓、结晶质量和微观形貌的表征。
The surface profiles, micro-morphologies and crystal quality of SSP ribbon and Poly-Si film were then investigated by the step profiler, XRD (X-ray Diffraction) and SEM (Scanning Electron Microscopy).
借助台阶仪、X射线衍射(XRD)、扫描电镜(sem)等手段对颗粒硅带及多晶硅薄膜进行了表面轮廓、结晶质量和微观形貌的表征。
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