In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
The structure of the laser crystallized poly-Si thin film is analyzed by using spectroscopic ellipsometry.
采用椭偏光谱法分析了薄膜的结构，并提出多层膜模型模拟薄膜结构。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
Poly-silicon thin film solar cells with high efficiency, stability and low-cost would replace the a-Si thin film solar cells as a new generation of non-pollution civil solar cells.
高效、稳定、廉价的多晶硅薄膜太阳电池有可能替代非晶硅薄膜太阳电池成为新一代无污染民用太阳能电池。
Poly-silicon thin film solar cells with high efficiency, stability and low-cost would replace the a-Si thin film solar cells as a new generation of non-pollution civil solar cells.
高效、稳定、廉价的多晶硅薄膜太阳电池有可能替代非晶硅薄膜太阳电池成为新一代无污染民用太阳能电池。
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