Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
This paper briefly describes the structure and principle of newly developed linear-array buried-channel CCD (BCCD) with 3-phase, polysilicon overlay-gate, and, experimental results are presented.
本文对已研制成的线阵三相多晶硅交迭栅埋沟CCD (BCCD)摄象器件的结构、原理及实验、结果做一个简要的阐述。
At the corner of the gate polysilicon (14.3) and the polysilicon tiles (14.1 and 14.2) are oxide spacers (60.1-60.6).
栅极多晶硅（14.3）和所述多晶硅瓦 片（14.1和14.2）的角落处是氧化物间隔物（60.1-60.6）。
The 2048-element CCPD to be butted USES three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
Gate polysilicon is deposited over the gate oxide.
以及沉积于所述栅极氧化物之上的栅极多晶硅。
Gate polysilicon is deposited over the gate oxide.
以及沉积于所述栅极氧化物之上的栅极多晶硅。
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