The polaron effects on excitons in a parabolic quantum well are studied.
研究了抛物阱中极化子效应对激子的影响。
This state corresponds to a lowest energy state in the first quantum well.
此状态对应第一个量子阱的最低能态。
The polarization eigcnfrequencies of symmetric and unsymmetric quantum well are given.
以及对称和非对称量子阱中面声子的色散曲线。
Silicon nitride can be used to grow quantum well for obtaining blue laser by dopanting.
氮化硅可以通过适当掺杂引入杂质能级，用于制造量子阱获得蓝光激光。
The additional upper state is created by a first quantum well adjacent to the injection barrier.
新增高能态是通过注入式势垒旁第一个量子阱来创建的。
Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors.
光侦测器垂直与平面结构。量子井次能带间跃迁型光侦测器。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
The luminescence origin of the film was discussed with a quantum well model in combination with percolation theory.
最后，采用量子限制模型并结合渗流理论解释了实验现象。
This paper presents a new algorithm for fast and accurate analysis of stripe Multiple Quantum Well (MQW) waveguides.
本文提出了一种快速和精确分析多量子阱(MQW)条形光波导的新算法。
Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported.
报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性。
The numerical results show that the interactions of the interface phonon and an electron in quantum well are not ignorable.
数值计算结果表明，量子阱中界面声子与电子的相互作用是不可忽略的。
The operation principles for quantum well devices are described in detail and a few examples of their applications is given.
详细地描述了量子阱器件的工作原理，并介绍了它在几个方面的应用。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
本文报道了以混合应变量子阱结构为有源区的激光器。
The transfer matrix and transmission coefficient through a parabolic quantum well are obtained by solving schrodinger equation .
文中通过求解薛定谔方程得到抛物形量子阱的变换矩阵与透射系数。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
The energy equilibrium model—The stability theorem on the strained quantum well structure materials have been introduced in the paper.
介绍应变量子阱材料的稳定性理论——能量平衡模型；
This paper presents a simulative method to solve the frequency response of single quantum well laser diode under small signal modulation.
文中运用三层速率模型，对小信号调制下单量子阱激光器的频率响应进行模拟分析。
Further developments are expected to have a potential applications in such as solar energy conversion, photo-switch, quantum well lasers etc.
该技术及其所制备的材料在光电转换、光开关和量子激光器等方面将获得广泛的应用。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The multi valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.
介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。
The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Achieving the energy level position in quantum Wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters.
量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。
This paper discusses the advantages of superlattice semiconductor materials (Multiple Quantum Well Structure) in optical switching and optical computing.
本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.
本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。
The ground state energy and the binding energy of a bound polaron in Quantum-dot Quantum well structure are calculated, and the free polaron is also studied.
我们数值计算了量子点量子阱结构中的自由极化子和束缚极化子的基态能量以及基态结合能。
The ground state energy and the binding energy of a bound polaron in Quantum-dot Quantum well structure are calculated, and the free polaron is also studied.
我们数值计算了量子点量子阱结构中的自由极化子和束缚极化子的基态能量以及基态结合能。
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