Modify quantum well structure can decrease threshold current and increase power.
重点设计了量子阱结构来降低阈值电流，提高输出光功率。
The energy equilibrium model—The stability theorem on the strained quantum well structure materials have been introduced in the paper.
介绍应变量子阱材料的稳定性理论——能量平衡模型；
The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
This paper discusses the advantages of superlattice semiconductor materials (Multiple Quantum Well Structure) in optical switching and optical computing.
本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
The ground state energy and the binding energy of a bound polaron in Quantum-dot Quantum well structure are calculated, and the free polaron is also studied.
我们数值计算了量子点量子阱结构中的自由极化子和束缚极化子的基态能量以及基态结合能。
The functions of VCSEL have made great process because of the application of quantum well structure. But which is the optimal quantum well numbers is a important subject.
VCSEL自从采用了量子阱结构后性能大大改善，但是量子阱阱数的多少才合理一直是一个重要的课题。
The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper.
本文从理论上对混合应变量子阱结构(既有张应变量子阱又有压应变量子阱)的光学限制因子进行了讨论。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
In the fifth chapter, we introduce a photonic quantum-well structure containing negative-index materials.
第五章，介绍了一种含有负折射率材料的光子晶体量子阱结构。
Using the optimization principles, the structure of quasi-symmetric coupled quantum-well is optimized.
以准对称耦合量子阱为蓝本，利用此优化原则，对其结构进行优化。
Such a device structure preferably contains a coupled quantum well devices having two or more quantum Wells that can be coupled together by inter well tunneling effect at degenerate energy levels.
这种器件结构优选地包含耦合量子阱器件，该耦合量子阱器件具有两个或更多个量子阱，该量子阱可以在简并能级通过阱间隧道效应而耦合在一起。
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.
提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。
The band offset directly affect the calculation results of the quantum well band structure. if the calculation of band offset does not accurate, we should not get right band edges.
在量子阱能带结构计算当中，带边不连续能量直接影响计算的结果，如果带边不连续能量计算不精确，就不能得到正确的能级位置。
Schematic illustration of quantum-well formation in ABA tri-block chain due to electronic structure differences.
由于电子结构的差异而形成的ABA三嵌段链的量子阱能带构型图 Fig。
Schematic illustration of quantum-well formation in ABA tri-block chain due to electronic structure differences.
由于电子结构的差异而形成的ABA三嵌段链的量子阱能带构型图 Fig。
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