Results show that AlN films deposited at low gas pressure have good selective orientation, and compressive residual shes increased with gas pressure is found in the films.

结果表明：在较低压力沉积的氮化铝薄膜有良好的择优取向性；氮化铝薄膜残余应力为压应力，且随气体压力增加而逐渐变化。

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Results show that AlN films deposited at low gas pressure have good selective orientation, and compressive residual shes increased with gas pressure is found in the films.

结果表明：在较低压力沉积的氮化铝薄膜有良好的择优取向性；氮化铝薄膜残余应力为压应力，且随气体压力增加而逐渐变化。

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