Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.
稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。
The experiments show that the microstructure of annealed sample is favourable to improving reverse breakdown voltage.
实验表明，退火后样品的微观结构有利于提高反向击穿电压。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
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