• The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.

    分析了真空压力射频功率气体组合及其流量电极温度刻蚀速率、刻蚀剖面影响

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  • It is proved that the uniformity of etch rate can be improved and the effect of micro load can be decreased by adjusting the value of chamber pressure, gas flow rate and RF power properly.

    结果表明,通过反应压力刻蚀气体流量射频功率调节可以降低负载效应的影响,得到良好的刻蚀均匀性。

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  • The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.

    二氧化硅反应离子刻蚀中反应压力,刻蚀气体流量射频功率等因素刻蚀速率刻蚀均匀性影响进行了研究。

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  • Oxide ion yield of the rare earth elements (REE) decreased with the increasing of RF power and the sampling depth, or with the decreasing of carrier gas flow rate.

    稀土元素氧化物离子产随入射功率采样深度增加流速减小而降低

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  • Oxide ion yield of the rare earth elements (REE) decreased with the increasing of RF power and the sampling depth, or with the decreasing of carrier gas flow rate.

    稀土元素氧化物离子产随入射功率采样深度增加流速减小而降低

    youdao

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