Schottky barrier diodes with different metal on III nitride have been fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。
This method is more exact than Schottky Barrier method by avoiding influence of back conductive current.
此法由于没有反向传导电流的影响，所以，比利用肖特基势垒方法要精确些；
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 a.
肖特基势垒整流器。最大重复峰值反向电压50V最大平均正向整流电流8.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压20V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 1.0 A.
肖特基势垒整流器。最大重复峰值反向电压40V最大平均正向整流电流1.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 a.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 1.0 a.
肖特基势垒整流器。最大重复峰值反向电压30V最大平均正向整流电流1.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压20V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 3.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流3.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压40V最大平均正向整流电流1.0 A。
Schottky barrier rectifier. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 1.0 a.
肖特基势垒整流器。经常性最大峰值反向电压30V最大平均正向整流电流1.0 A。
The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs.
膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。
Schottky barrier rectifier. Max recurrent peak reverse voltage 40v. Max RMS voltage 21v. Max DC blocking voltage 40v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大RMS电压21v。最大直流阻断电压40v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 30v. Max RMS voltage 21v. Max DC blocking voltage 30v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压30v。最大RMS电压21v。最大的隔直流电压30v。电流1.0A。
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A.
肖特基势垒整流器。案例负。经常性最大峰值反向电压50V最大平均正向整流电流8.0 A。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。
K-band single balanced Schottky-barrier diode (SBD) mixer, suitable for automotive collision-avoidance radar, has been designed and fabricated.
本文给出了一种应用在汽车防撞雷达前端的单平衡环形混频器。
K-band single balanced Schottky-barrier diode (SBD) mixer, suitable for automotive collision-avoidance radar, has been designed and fabricated.
本文给出了一种应用在汽车防撞雷达前端的单平衡环形混频器。
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