Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
K-band single balanced Schottky-barrier diode (SBD) mixer, suitable for automotive collision-avoidance radar, has been designed and fabricated.
本文给出了一种应用在汽车防撞雷达前端的单平衡环形混频器。
K-band single balanced Schottky-barrier diode (SBD) mixer, suitable for automotive collision-avoidance radar, has been designed and fabricated.
本文给出了一种应用在汽车防撞雷达前端的单平衡环形混频器。
应用推荐